Research Article

Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters

Figure 2

Optical gain and radiative current density as function of injected carriers density Ninj ranging from 5 × 1017 to 2 × 1018 cm−3 for p-GaAs/i-GaN0.38yAs1–1.38ySby/n-GaAs QW structure. The Sb composition and well width are and , respectively.