Research Article

Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters

Figure 3

Optical gain as function of energy for different doping densities for p-GaAs/i-GaN0.38yAs1–1.38ySby/n-GaAs QW laser structure with ND equal to 5 × 1016, 1 × 1017, and 1.5 × 1017 cm−3. The Sb composition and well width are and , respectively.