Research Article

Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters

Figure 4

The radiative current density as function of applied electric field F varying from 0 up to 40 kV/cm for p-GaAs/i-GaN0.38yAs1–1.38ySby/n-GaAs QW structure operating at 1.55 μm telecommunication wavelength. The Sb composition and the well width are and , respectively.