Optical Investigation of p-GaAs/i-GaN<sub>0.38y</sub>As<sub>1-1.38y</sub>Sb<sub>y</sub>/n-GaAs Quantum Wells Emitters

<div>(a) Variation of radiative current density and fundamental energy transition as function of well width. (b) The adjusted value of Sb composition and radiative current density at 1.55 <i>μ</i>m.</div>

Journal of Nanotechnology

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Figure 5

Figure 5: Optical Investigation of p-GaAs/i-GaN<sub>0.38y</sub>As<sub>1-1.38y</sub>Sb<sub>y</sub>/n-GaAs Quantum Wells Emitters 

Journal of Nanotechnology

Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters

Figure 5

Optical Investigation of p-GaAs/i-GaN_0.38yAs_1-1.38ySb_y/n-GaAs Quantum Wells Emitters