Thermodynamics of Silicon Nanowire Growth under Unintended Oxidation of Catalytic Particles

Figure 1

(a) and (b) are SEM images of Si NWs grown with the participation of catalytic Ni particles on a {111} Si substrate in a growth atmosphere that has not undergone additional purification from the presence of O₂ at the temperature of 1473 K at various magnifications; (c) stable NW growth in the Ni-Si system at the same temperature of 1473 K (purification from the presence of O₂ was performed to achieve stable nanowire growth). SEM images of the top view of {111} Si substrate samples with Ti (d), Mg (e), and Al (f) particles after 10 min of NW growth. These three samples (d, e) illustrate inhibition of NW growth due to surface oxide layer formation.

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