Research Article

Micro-Optoelectromechanical Tilt Sensor

Table 1

Target design specifications.

CMOS technologyAMS 0.35 μm 2P4M CMOS
MEMS technologyTronics SOI/HARM
Supply voltage3.3 V
Circuit size2500 μm × 2500 μm
Device count4312
Input light intensity (range)10 nW/mm2 to 100 μW/mm2
Input system clock (range)100 Hz to 1 MHz
Input current bias (range)1 nA to 50 nA
Tilt angle range330° (±165°)
Tilt resolution5°
Effective dynamic range36 dB (6 bits)
System power consumption10–35 μW

Excluding light emitter consumption.