Figure 7: (a–c) 𝐼 d s - 𝑉 𝑔 curves for single-walled carbon nanotube devices on the membrane at 0, 5, 10, 15, and 0 psi ( 𝑉 d s = 10 mV). The arrows indicate the direction of the curves with increasing pressure. The first two devices are for small-gap semiconducting carbon nanotubes, and the third one is for semiconducting carbon nanotubes. (d–f) 𝑅 m a x values of the 𝐼 d s - 𝑉 𝑔 curves versus strain and a fit to an exponential [8].