Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate

<div>Current voltage characteristics of the photodiodes under dark and illumination conditions. (a) Comparison between pn diode and TFET without BBT.KANE model, (b) comparison between pn diode and TFET with BBT.KANE model, and (c) response to four separate wavelength lights.</div>

Journal of Sensors

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Figure 3

Figure 3: Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate 