In₂O₃- and SnO₂-Based Thin Film Ozone Sensors: Fundamentals

Figure 8

Sensor signal dependences on the O₃ concentration determined for devices designed in different labs: 1: In₂O₃ (sol-gel + drop coating technologies,  nm, = 300°C) [50]; 2: In₂O₃ (sol-gel + spin coating technologies, = 235°C) [33]; 3: In₂O₃ (laser ablation,  nm, = 330°C) [34]; 4: In₂O₃ (sol-gel,  nm, = 235°C) [118]; 5: In₂O₃ (mesoporous, UV illumination, = RT) [119]; 6: In₂O₃ (sol-gel + screen-printing technologies, = 235°C) [33]; 7: SnO₂:Pt (2%) (laser ablation, = 120°C) [35]; 8: In₂O₃:Fe (3%) (CVD, = 370°C) [120]; 9: In₂O₃ (MOCVD,  nm, UV illumination, = RT) [121]; 10: In₂O₃ (laser ablation, = 84°C) [35]; 11: In₂O₃ (sol-gel, = 200–300°C) [14]; 12: In₂O₃ (MOCVD, UV illumination, = RT) [15]; 13: ITO (3% Sn) (sol-gel + dip-coating technologies,  μm, = 360°C) [122].