Hall Effect Devices with Three Terminals: Their Magnetic Sensitivity and Offset Cancellation Scheme

Figure 2

A Vertical Hall effect device with five contacts and four terminals in BiCMOS technology with deep trench isolation. The contacts comprise shallow n⁺S/D-diffusions and slightly deeper nCMOS-wells. The bottom of the Hall effect region is shorted by a highly conductive n-buried layer at floating potential.

(a)

(b)