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Journal of Sensors
Volume 2016, Article ID 6086752, 5 pages
Research Article

Ru-Based Thin Film Temperature Sensor for Space Environments: Microfabrication and Characterization under Total Ionizing Dose

1Department of Electronic Engineering, University of Valencia, Avenida de la Universitat, s/n, 46100 Burjassot, Spain
2INESC Microsystems and Nanotechnologies (INESC-MN) and Physics Department, Instituto Superior Técnico, Lisbon University, R. Alves Redol 9, 1000-029 Lisbon, Portugal
3International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, 4715-31 Braga, Portugal

Received 15 December 2015; Revised 29 February 2016; Accepted 21 March 2016

Academic Editor: Oleg Lupan

Copyright © 2016 S. I. Ravelo Arias et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The paper shows the microfabrication processes of a Ruthenium-based resistance temperature detector and its behavior in response to irradiation at ambient temperature. The radiation test was done in a public hospital facility and followed the procedures based on the ESA specification ESCC 22900. The instrumentation system used for the test is detailed in the work describing the sensors resistance evolution before, during, and after the exposure. A total irradiation dose of 43 krad with 36 krad/h dose rate was applied and a subsequent characterization was performed once the Ru sensors were submitted to an 80°C annealing process during a period of 168 h. The experimental measurements have shown the stability of this sensor against total ionizing dose (TID) tests, not only in their resistance absolute values during the irradiation phase but also in the relative deviation from their values before irradiation.