Modeling, Design, and Fabrication of Self-Doping Si_1−xGe_x/Si Multiquantum Well Material for Infrared Sensing

Figure 2

Valence energy bands of Si/SiGe quantum well with different boron doping: (a) 10¹⁹ cm⁻³ boron doping both in Si and in SiGe layers; (b) 10¹⁸ cm⁻³ boron doping both in Si and in SiGe layers; (c) 10¹⁹ cm⁻³ boron doping only in SiGe layer; (d) 10¹⁸ cm⁻³ boron doping only in SiGe layer.

(a)

(b)

(c)

(d)