Research Article
Modeling, Design, and Fabrication of Self-Doping Si1−xGex/Si Multiquantum Well Material for Infrared Sensing
Table 1
Epitaxial process parameters of Si/SiGe MQWs with RPCVD.
| | Steps | Temperature (°C) | Sources | Flow (sccm) | Time | Comments |
| | 1 | 600 | Si2H6/BH3/H2 | 6/1/80 | 30 min | High boron doping Si, 200 nm | | 2 | 600 | Si2H6/H2 | 6/60 | 9 min | Buffer layer, 60 nm | | 3 | 600 | Si2H6/GeH4/H2 | 6/2.6/80 | 100 s | Si/SiGe cycles
(30 nm/10 nm) | | 4 | 600 | Si2H6/H2 | 6/60 | 4.5 min | | 5 | 600 | Si2H6/BH3/H2 | 6/1/80 | 30 min | High boron doping Si, 200 nm |
|
|
