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Journal of Sensors
Volume 2016 (2016), Article ID 8534198, 12 pages
http://dx.doi.org/10.1155/2016/8534198
Research Article

Development of Low-Noise Small-Area 24 GHz CMOS Radar Sensor

1Department of Statistics, Pukyong National University, Busan 48513, Republic of Korea
2Department of Information and Communications Engineering, Pukyong National University, Busan 48513, Republic of Korea

Received 9 March 2016; Revised 6 June 2016; Accepted 30 June 2016

Academic Editor: Jesus Corres

Copyright © 2016 Min Yoon and Jee-Youl Ryu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We present a low-noise small-area 24 GHz CMOS radar sensor for automotive collision avoidance. This sensor is based on direct-conversion pulsed-radar architecture. The proposed circuit is implemented using TSMC 0.13 μm RF (radio frequency) CMOS ( GHz) technology, and it is powered by a 1.5 V supply. This circuit uses transmission lines to reduce total chip size instead of real bulky inductors for input and output impedance matching. The layout techniques for RF are used to reduce parasitic capacitance at the band of 24 GHz. The proposed sensor has low cost and low power dissipation since it is realized using CMOS process. The proposed sensor showed the lowest noise figure of 2.9 dB and the highest conversion gain of 40.2 dB as compared to recently reported research results. It also showed small chip size of 0.56 mm2, low power dissipation of 39.5 mW, and wide operating temperature range of −40 to +125°C.