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Journal of Sensors
Volume 2017 (2017), Article ID 1961734, 9 pages
Research Article

Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

1Lev Academic Center, Faculty of Engineering, Department of Applied Physics/Electro-Optics Engineering, 9116001 Jerusalem, Israel
2Semiconductor Devices Laboratory, Faculty of Engineering, Bar-Ilan University, 52900 Ramat Gan, Israel
3Department of Electro-Optics, Faculty of Engineering, Bar-Ilan University, 52900 Ramat Gan, Israel

Correspondence should be addressed to Avi Karsenty

Received 5 September 2017; Accepted 16 October 2017; Published 5 November 2017

Academic Editor: Lucio Pancheri

Copyright © 2017 Yaakov Mandelbaum et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A new nanoscale SOI dual-mode modulator is investigated as a function of optical and thermal activation modes. In order to accurately characterize the device specifications towards its future integration in microelectronics circuitry, current time variations are studied and compared for “large signal” constant temperature changes, as well as for “small signal” fluctuating temperature sources. An equivalent circuit model is presented to define the parameters which are assessed by numerical simulation. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the next generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.