High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

Figure 4

(a) Current gain, unilateral power gain versus frequency (solid: current gain ; open: unilateral power gain ), and (b) parasitic capacitances and versus frequency (solid: ; open: ) of InGaAs MOSFET with sidewall “spacer 1,” “spacer 2,” and without sidewall.

(a)

(b)