High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

Figure 8

(a) Current gain, unilateral power gain versus frequency (solid: current gain ; open: unilateral power gain ), and (b) parasitic capacitances and versus frequency (solid: ; open: ) of InGaAs MOSFET with sidewall “spacer 2” thickness variation from 2 nm to 10 nm design.

(a)

(b)