High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

Figure 9

Proposed device fabrication steps for “spacer 1” and “spacer 2” structures (steps (1) and (2) are the common processing steps, steps (3b), (4b), and (5b) are the “spacer 1” processing steps, and steps (3c), (4c), and (5c) are the “spacer 2” processing steps).