Journal of Sensors / 2017 / Article / Tab 1

Research Article

Study of the Photo- and Thermoactivation Mechanisms in Nanoscale SOI Modulator

Table 1

Comparison between nanometric and micrometric devices.

ParameterSOIPAM
Microdevice
1st generation
SOIPAM/TAM
Nanodevice 2nd generation
SOITAM
Nanodevice
3rd generation

Substrate width20 μm20 μm250 nm
Substrate length28 μm28 μm65 nm
Substrate height10 μm10 μm100 nm
V-groove length10 μm10 μm100 nm
V-groove height7.06 μm7.06 μm70 nm
BOX thickness150 nm150 nm30 nm
Channel thickness 30 nm30 nm30 nm
Channel length 18 µm300 nm45 nm
Channel width 2 μm2 μm22 nm

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