Research Article
Study of the Photo- and Thermoactivation Mechanisms in Nanoscale SOI Modulator
Table 1
Comparison between nanometric and micrometric devices.
| Parameter | SOIPAM Microdevice 1st generation | SOIPAM/TAM Nanodevice 2nd generation | SOITAM Nanodevice 3rd generation |
| Substrate width | 20 μm | 20 μm | 250 nm | Substrate length | 28 μm | 28 μm | 65 nm | Substrate height | 10 μm | 10 μm | 100 nm | V-groove length | 10 μm | 10 μm | 100 nm | V-groove height | 7.06 μm | 7.06 μm | 70 nm | BOX thickness | 150 nm | 150 nm | 30 nm | Channel thickness | 30 nm | 30 nm | 30 nm | Channel length | 18 µm | 300 nm | 45 nm | Channel width | 2 μm | 2 μm | 22 nm |
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