Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 <i>μ</i>m CMOS

<div>Principle of the extraction of the after-pulsing probability from the interarrival time histogram.</div>

Journal of Sensors

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Figure 3

Figure 3: Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 <i>μ</i>m CMOS 

Figure 3 | Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS 