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Journal of Spectroscopy
Volume 2016, Article ID 1617063, 14 pages
http://dx.doi.org/10.1155/2016/1617063
Research Article

Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

1Institute of Electron Technology, Aleja Lotników 36/42, 02-668 Warsaw, Poland
2Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland

Received 27 September 2015; Accepted 10 November 2015

Academic Editor: Christoph Krafft

Copyright © 2016 Paweł Borowicz. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Paweł Borowicz, “Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth,” Journal of Spectroscopy, vol. 2016, Article ID 1617063, 14 pages, 2016. https://doi.org/10.1155/2016/1617063.