Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

<div>Raman data obtained with excitation in visible spectral range: (a) position of maximum of one-phonon Si line as a function of<i> effective absorption depth</i> and (b) FWHM of one-phonon Si line as a function of<i> effective absorption depth</i>. Insets present following functions of<i> effective absorption depth</i>: panel (a) mechanical stress in silicon calculated from position of one-phonon Si line and panel (b) intensity of the one-phonon Si line.</div>

Journal of Spectroscopy

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Figure 2

Figure 2: Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth 

Figure 2 | Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth 