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Journal of Spectroscopy
Volume 2016 (2016), Article ID 5810592, 8 pages
Research Article

Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

1Centro de Investigación en Micro y Nanotecnología, Universidad Veracruzana, 94292 Boca del Río, VER, Mexico
2CONACYT Research Fellow-Centro de Ingeniería y Desarrollo Industrial, 76125 Querétaro, QRO, Mexico
3Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología, Universidad Autónoma de San Luis Potosí, 78210 San Luis Potosí, SLP, Mexico

Received 9 November 2015; Accepted 27 January 2016

Academic Editor: Jau-Wern Chiou

Copyright © 2016 J. Hernández-Torres et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with films located at ≈ eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant band. ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content.