Free-Electron Screening Mechanism of the Shallow Impurity Breakdown in n-GaAs: Evidences from the Photoelectric Zeeman and Cyclotron Resonance Spectroscopies

Table 1

Characteristics of different samples, grown by liquid-phase epitaxy (LPE) and vapor-phase epitaxy (VPE); the experimentally measured and theoretically predicted δ values of the line widths of donor lines at different cyclotron frequencies.

Samples				(meV)	(meV)	δ (meV)
1 VPE	4.33	0.52	10	0.064	0.07	0.214	3.06
2 VPE	7.35	0.65	7.3	0.07	0.08	0.270	3.38
3 LPE	8.67	0.53	7.3	0.15	0.16	0.271	1.69
4 VPE	1.46	0.38	5.7	0.085	0.09	0.297	3.03
5 LPE	4.22	0.36	8.6	0.136	0.14	0.194	1.39
6 VPE	4.31	0.52	10	0.062	0.065	0.214	3.29
7 VPE	High purity	—	—	0.012	0.008