Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Figure 20

Capacity and 𝑄 value of an optimized BaTiO₃ thin film capacitor with Pt electrodes on CoorsTec microwave ceramic substrate in dependence on temperature and DC bias voltage (1 kHz). The relative tunability of capacity is shown in Figure 21. The 𝑄 value is maximum for 6 V DC bias.

(a)

(b)