Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition
Figure 21
Relative tunability of capacity in dependence on temperature and DC bias voltage for the BTO sample of Figure 20. The temperature dependence is weak as desired for applications. The tunability is 60% for electrical field strength in the dielectric of ~5 V/μm with an assumed thickness of 2 μm.
