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Mathematical Problems in Engineering
Volume 2010, Article ID 407561, 32 pages
Research Article

Model of PE-CVD Apparatus: Verification and Simulations

1Department of Mathematics, Humboldt-University of Berlin, Unter den Linden 6, 10099 Berlin, Germany
2Department of Physics, University of Duisburg-Essen, Lotharstr.1, 47048 Duisburg, Germany

Received 4 January 2010; Accepted 21 April 2010

Academic Editor: Shi Jian Liao

Copyright © 2010 J. Geiser et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this paper, we present a simulation of chemical vapor deposition with metallic bipolar plates. In chemical vapor deposition, a delicate optimization between temperature, pressure and plasma power is important to obtain homogeneous deposition. The aim is to reduce the number of real-life experiments in a given CVD plasma reactor. Based on the large physical parameter space, there are a hugh number of possible experiments. A detailed study of the physical experiments in a CVD plasma reactor allows to reduce the problem to an approximate mathematical model, which is the underlying transport-reaction model. Significant regions of the CVD apparatus are approximated and physical parameters are transferred to the mathematical parameters. Such an approximation reduces the mathematical parameter space to a realistic number of numerical experiments. The numerical results are discussed with physical experiments to give a valid model for the assumed growth and we could reduce expensive physical experiments.