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Mathematical Problems in Engineering
Volume 2015, Article ID 145258, 13 pages
Research Article

A New Six-Parameter Model Based on Chebyshev Polynomials for Solar Cells

1College of New Energy, Bohai University, Jinzhou 121013, China
2School of Mathematics and Physics, Bohai University, Jinzhou 121013, China

Received 29 December 2014; Accepted 2 April 2015

Academic Editor: Georgios Veronis

Copyright © 2015 Shu-xian Lun et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents a new current-voltage (I-V) model for solar cells. It has been proved that series resistance of a solar cell is related to temperature. However, the existing five-parameter model ignores the temperature dependence of series resistance and then only accurately predicts the performance of monocrystalline silicon solar cells. Therefore, this paper uses Chebyshev polynomials to describe the relationship between series resistance and temperature. This makes a new parameter called temperature coefficient for series resistance introduced into the single-diode model. Then, a new six-parameter model for solar cells is established in this paper. This new model can improve the accuracy of the traditional single-diode model and reflect the temperature dependence of series resistance. To validate the accuracy of the six-parameter model in this paper, five kinds of silicon solar cells with different technology types, that is, monocrystalline silicon, polycrystalline silicon, thin film silicon, and tripe-junction amorphous silicon, are tested at different irradiance and temperature conditions. Experiment results show that the six-parameter model proposed in this paper is an I-V model with moderate computational complexity and high precision.