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Mathematical Problems in Engineering
Volume 2015, Article ID 450324, 4 pages
Research Article

The Wavelength-Locking of High-Power 808 nm Semiconductor Laser

National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China

Received 27 July 2014; Accepted 15 September 2014

Academic Editor: Stephen D. Prior

Copyright © 2015 Hai-Xia Guo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S. Li, Y. Shi, J. Li, and R. Gu, “Experimental demonstration of the corrugation pitch modulated DFB semiconductor laser based on the reconstruction-equivalent-chirp technology,” in Proceedings of the Asia Communications and Photonics Conference and Exhibition (ACP '10), pp. 112–113, Shanghai, China, 2010. View at Publisher · View at Google Scholar
  2. G. J. Steckman, W. Liu, R. Platz, D. Schroeder, C. Moser, and F. Havermeyer, “Volume holographic grating wavelength stabilized laser diodes,” IEEE Journal on Selected Topics in Quantum Electronics, vol. 13, no. 3, pp. 672–678, 2007. View at Publisher · View at Google Scholar · View at Scopus
  3. J. Fricke, F. Bugge, A. Ginolas et al., “High-power 980-nm broad-area lasers spectrally stabilized by surface bragg gratings,” IEEE Photonics Technology Letters, vol. 22, no. 5, pp. 284–286, 2010. View at Publisher · View at Google Scholar · View at Scopus
  4. C. M. Schultz, P. Crump, H. Wenzel et al., “11W broad area 976 nm DFB lasers with 58% power conversion efficiency,” Electronics Letters, vol. 46, no. 8, pp. 580–581, 2010. View at Publisher · View at Google Scholar · View at Scopus
  5. M. Kanskar, H. An, J. Cai, C. Galstad, E. Stiers, and Y. He, SSDLTR, Los Angeles, Calif, USA, 2007.