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Mathematical Problems in Engineering
Volume 2015, Article ID 573980, 5 pages
http://dx.doi.org/10.1155/2015/573980
Research Article

Anomaly Detection and Degradation Prediction of MOSFET

1College of Information Engineering, Capital Normal University, Beijing 100048, China
2Beijing Engineering Research Center of High Reliable Embedded System, Capital Normal University, Beijing 100048, China
3School of Automation, Beijing Information Science and Technology University, Beijing 100192, China

Received 12 September 2014; Accepted 24 December 2014

Academic Editor: Gang Li

Copyright © 2015 Li-Feng Wu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. M. Cheralathan, C. Sampedro, F. Gámiz, and B. Iñiguez, “Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models,” Solid-State Electronics, vol. 98, pp. 2–6, 2014. View at Publisher · View at Google Scholar · View at Scopus
  2. V. Kumari, M. Saxena, R. S. Gupta, and M. Gupta, “Investigation of electrostatic integrity of nanoscale dual material gate dielectric pocket silicon-on-void (DMGDPSOV) MOSFET for improved device scalability,” IEEE Transactions on Nanotechnology, vol. 13, no. 4, pp. 667–675, 2014. View at Publisher · View at Google Scholar
  3. B.-I. Lee, J. M. Geum, E. S. Jung, E. G. Kang, Y.-T. Kim, and M. Y. Sung, “Analysis of lattice temperature in super junction trench gate power MOSFET as changing degree of trench etching,” Journal of Semiconductor Technology and Science, vol. 14, no. 3, pp. 263–267, 2014. View at Google Scholar
  4. A. Ginart, M. J. Roemer, P. W. Kalgren, and K. Goebel, “Modeling aging effects of IGBTs in power drives by ringing characterization,” in Proceedings of the International Conference on Prognostics and Health Management (PHM '08), pp. 1–7, Denver, Colo, USA, October 2008. View at Publisher · View at Google Scholar · View at Scopus
  5. X. Zheng, L. Wu, Y. Guan, and X. Li, “Analysis of the degradation of MOSFETs in switching mode power supply by characterizing source oscillator signals,” Mathematical Problems in Engineering, vol. 2013, Article ID 302563, 7 pages, 2013. View at Publisher · View at Google Scholar · View at Scopus
  6. L.-F. Wu, Y. Zheng, Y. Guan, G.-H. Wang, and X.-J. Li, “A non-intrusive method for monitoring the degradation of MOSFETs,” Sensors, vol. 14, no. 1, pp. 1132–1139, 2014. View at Publisher · View at Google Scholar · View at Scopus
  7. V. Smet, F. Forest, J.-J. Huselstein et al., “Ageing and failure modes of IGBT modules in high-temperature power cycling,” IEEE Transactions on Industrial Electronics, vol. 58, no. 10, pp. 4931–4941, 2011. View at Publisher · View at Google Scholar · View at Scopus
  8. J. R. Celaya, V. Vashchenko, P. Wysocki, S. Saha, and K. Goebel, “Accelerated aging system for prognostics of power semiconductor devices,” in Proceedings of the IEEE (AUTOTESTCON '10), vol. 4, pp. 1–6, Orlando, Fla, USA, September 2010. View at Publisher · View at Google Scholar · View at Scopus
  9. S. Saha, J. R. Celaya, and V. Vashchenko, “Accelerated aging with electrical overstress and prognostics for power MOSFETs,” Energytech, vol. 47, pp. 1–6, 2011. View at Google Scholar
  10. J. R. Celaya, A. Saxena, C. S. Kulkarni, S. Saha, and K. Goebel, “Prognostics approach for power MOSFET under thermal-stress aging,” in Proceedings of the Annual Reliability and Maintainability Symposium (RAMS '12), pp. 1–6, January 2012. View at Publisher · View at Google Scholar · View at Scopus
  11. J. R. Celaya, P. Wysocki, V. Vashchenko, S. Saha, and K. Goebel, “Accelerated aging system for prognostics of power semiconductor devices,” in Proceedings of the IEEE AUTOTESTCON, pp. 1–6, Orlando, Fla, USA, September 2010.
  12. Y. Chen, B. Sun, J.-S. Xie, and R. Kang, “Typical use environmental conditions, test conditionds and failure mechanisms of high reliability electronic components,” Electronic Product Reliability and Environmental Testing, vol. 25, no. 6, pp. 23–30, 2007. View at Google Scholar
  13. Y. Wang, Z. Yu, and Z. Sun, Electronic Element Device Reliability Design, Science Publishing House, Beijing, China, 2007.
  14. D. Zhou, Y. Xi, and Z. Zhang, “Suboptimal fading extended Kalman filtering for nonlinear systems,” Control and Decision, vol. 5, no. 5, pp. 1–6, 1990. View at Google Scholar