Anomaly Detection and Degradation Prediction of MOSFET

Table 1

Typical failure modes [12].

Elements of the package	Environmental factors and electrical stress
	Humidity	Ambient temperature	Power cycle	Electrical stress
Shell	J	U	—	U
Chip	J	X, T, Z, J, AD, AN, AM	A, R, L	J, K, M, X, T
Adhesive layer	J, K	U	A, C, E, R, L	—
Lead interconnect	J, E	M	A, C, B, Q, E, R, L, M	J, M, X

A: brittle fracture failure; C: plastic failure; AN: secondary breakdown; E: gum-off; AM: overheating stress breakdown; B: medium yield; Q: elastic deformation; X: EOS/ESD; J: corrosion; K: crystal which is too large; M: penetration and diffusion; L: increased fatigue crack depth; R: fatigue cracks; T: electromigration; Z: metallic material migration; U: oxide layer failure; AD: TDDB breakdown.