Anomaly Detection and Degradation Prediction of MOSFET

Table 2

Power MOSFET parameter drift failure mode and main failure mechanism [13].

Failure mode	Failure mechanism
Threshold voltage shift	Hot carrier injection effect; ionizing radiation-induced valence bond breakage of gate silicon dioxide, producing positive space charge; PBTI effect
Channel resistance drift	Hot carrier injection effect; channel layer breakdown leading to a negative drift of channel resistance
Transconductance fall	Channel carrier mobility decreases due to interface scattering; ray radiation; hot carrier injection effect
Gate breakdown	Time-dependent dielectric breakdown (TDDB); electrostatic discharge; electromagnetic pulse or surge voltage; iron leakage; chemical reaction of aluminum and silica
Noise coefficient increases	Radiation; metallization electromigration
Ohmic contact degradation	Thermoelectric migration