Anomaly Detection and Degradation Prediction of MOSFET
Table 2
Power MOSFET parameter drift failure mode and main failure mechanism [13].
Failure mode
Failure mechanism
Threshold voltage shift
Hot carrier injection effect; ionizing radiation-induced valence bond breakage of gate silicon dioxide, producing positive space charge; PBTI effect
Channel resistance drift
Hot carrier injection effect; channel layer breakdown leading to a negative drift of channel resistance
Transconductance fall
Channel carrier mobility decreases due to interface scattering; ray radiation; hot carrier injection effect
Gate breakdown
Time-dependent dielectric breakdown (TDDB); electrostatic discharge; electromagnetic pulse or surge voltage; iron leakage; chemical reaction of aluminum and silica