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Mathematical Problems in Engineering
Volume 2016, Article ID 3479752, 10 pages
Research Article

Control of Bouncing in MEMS Switches Using Double Electrodes

1Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
2Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, 13902 NY, USA

Received 19 April 2016; Revised 26 June 2016; Accepted 27 June 2016

Academic Editor: Zhike Peng

Copyright © 2016 Farhan Abdul Rahim and Mohammad I. Younis. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents a novel way of controlling the bouncing phenomenon commonly present in the Radio Frequency Microelectromechanical Systems (RF MEMS) switches using a double-electrode configuration. The paper discusses modeling bouncing using both lumped parameter and beam models. The simulations of bouncing and its control are discussed. Comparison between the new proposed method and other available control techniques is also made. The Galerkin method is applied on the beam model accounting for the nonlinear electrostatic force, squeeze film damping, and surface contact effect. The results indicate that it is possible to reduce bouncing and hence beam degradation, by the use of double electrodes.