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Mathematical Problems in Engineering
Volume 2018, Article ID 1747865, 10 pages
Research Article

About v-i Pinched Hysteresis of Some Non-Memristive Systems

1Faculty of Electrical Engineering and Communication, Brno University of Technology, Brno, Czech Republic
2Faculty of Military Technologies, University of Defence, Brno, Czech Republic
3Faculty of Electrical and Computer Engineering, Technical University Dresden, Germany

Correspondence should be addressed to Zdenek Biolek; moc.liamg@keloib.kenedz

Received 17 June 2018; Accepted 7 August 2018; Published 24 September 2018

Academic Editor: Isabel S. Jesus

Copyright © 2018 Dalibor Biolek et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.