Coupling and Shielding Properties of the Baffle in ICP System
Figure 2
Simulated deposition profile of the Cu coating on the deposition baffle over the period five times longer than its lifetime: (a) assumed neutrals flux only (0% Cu ionization) with no sputter etch back, the simulation was sustained up to thickness 5 mm at the flat field; (b) the neutrals flux and ions flux (50% Cu ionization), assumed 10% Ar sputter etch back; and (c) neutrals flux and ions flux (85% Cu ionization), 15% Ar sputter etch back. Photo (d) illustrates the actual deposition over the half lifetime of the deposition baffle.