Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET

<div>Comparison of transconductance for HZO, Al<sub>2</sub>O<sub>3</sub>, and HfO<sub>2</sub>-based FinFET’s keeping channel thickness, <svg height="8.8423pt" id="M40" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 12.8091 8.8423" width="12.8091pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M962 650H739L732 622L760 619C812 613 819 604 798 552C760 457 671 267 606 131H604L511 638H480L237 131H233L183 554C177 607 183 614 226 619L248 622L257 650H24L17 622C88 615 92 611 103 524L173 -11H203L450 491H453L543 -11H575L839 529C882 609 886 613 953 622L962 650Z"></path></g></svg> fixed at 4 nm and effective channel length, L<sub>eff</sub> varies from 2 to 16 nm.</div>

Modelling and Simulation in Engineering

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Figure 9

Figure 9: Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET 