Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET

Table 1

Proposed device parameters.

Symbol	Designation	Value
	Effective channel length	16 nm
	Height of fin	10 nm
	Thickness of fin	4 nm
	Oxide thickness	1 nm
	Channel concentration	10^16 cm^−3
	Buried oxide thickness	20 nm