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Volume 2017, Article ID 2362084, 7 pages
https://doi.org/10.1155/2017/2362084
Research Article

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

1Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
2Institute of Energy Research and Physical Technologies, Clausthal University of Technology and Energy Research Center of Lower Saxony, Clausthal-Zellerfeld, Germany

Correspondence should be addressed to Ikai Lo; wt.ude.usysn.liam@oliaki

Received 28 July 2017; Accepted 13 September 2017; Published 18 October 2017

Academic Editor: Guosong Wu

Copyright © 2017 Yu-Chiao Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yu-Chiao Lin, Ikai Lo, Hui-Chun Shih, Mitch M. C. Chou, and D. M. Schaadt, “Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates,” Scanning, vol. 2017, Article ID 2362084, 7 pages, 2017. https://doi.org/10.1155/2017/2362084.