Growth and Characterization of<i> M</i>-Plane GaN Thin Films Grown on <i>γ</i>-LiAlO<sub>2</sub> (100) Substrates

<div>Rocking curve FWHM values of samples A, B, C, D, and E for <svg height="11.439pt" id="M95" style="vertical-align:-2.15067pt" version="1.1" viewbox="-0.0498162 -9.28833 4.60146 11.439" width="4.60146pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M290 -163V-135C183 -126 181 -122 181 -44V583C181 662 184 666 290 675V703H120V-163H290Z" id="g113-92"></path></g></svg>11<svg height="11.6608pt" id="M96" style="vertical-align:-0.04979992pt" version="1.1" viewbox="-0.0498162 -11.611 6.36303 11.6608" width="6.36303pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><rect height="0.65243" width="6.26339" x="0" y="-10.9087"></rect><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M412 140C382 77 369 73 315 73H129L270 222C362 320 402 379 402 466C402 571 322 635 234 635C177 635 130 609 99 576L42 495L64 475C90 514 133 568 201 568C274 568 318 519 318 435C318 349 255 267 193 193C144 135 87 78 32 23V0H405C417 45 427 89 440 131L412 140Z" id="g113-51"></path></g></svg>0<svg height="11.439pt" id="M97" style="vertical-align:-2.15067pt" version="1.1" viewbox="-0.0498162 -9.28833 4.60146 11.439" width="4.60146pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M226 -163V703H56V676C162 667 165 662 165 584V-43C165 -122 162 -126 56 -136V-163H226Z" id="g113-94"></path></g></svg> azimuth (open square) and <svg height="11.439pt" id="M98" style="vertical-align:-2.15067pt" version="1.1" viewbox="-0.0498162 -9.28833 34.1569 11.439" width="34.1569pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M290 -163V-135C183 -126 181 -122 181 -44V583C181 662 184 666 290 675V703H120V-163H290Z" id="g113-92"></path></g><g transform="matrix(.013,0,0,-0.013,4.485,0)"><path d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z" id="g113-49"></path></g><g transform="matrix(.013,0,0,-0.013,10.725,0)"><path d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z" id="g113-49"></path></g><g transform="matrix(.013,0,0,-0.013,16.965,0)"><path d="M241 635C89 635 35 457 35 312C35 153 89 -12 240 -12C390 -12 443 166 443 312C443 466 390 635 241 635ZM238 602C329 602 354 454 354 312C354 172 330 22 240 22C152 22 124 173 124 313S148 602 238 602Z" id="g113-49"></path></g><g transform="matrix(.013,0,0,-0.013,23.205,0)"><path d="M384 0V27C293 34 287 42 287 114V635C232 613 172 594 109 583V559L157 557C201 555 205 550 205 499V114C205 42 199 34 109 27V0H384Z" id="g113-50"></path></g><g transform="matrix(.013,0,0,-0.013,29.445,0)"><path d="M226 -163V703H56V676C162 667 165 662 165 584V-43C165 -122 162 -126 56 -136V-163H226Z" id="g113-94"></path></g></svg> azimuth (solid circle).</div>

Scanning

fig4

Figure 4

Figure 4: Growth and Characterization of<i> M</i>-Plane GaN Thin Films Grown on <i>γ</i>-LiAlO<sub>2</sub> (100) Substrates 

Scanning

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

Figure 4

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO₂ (100) Substrates