Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays

<div>Total carrier recombination rate from the interface to the bulk of silicon.</div>

Science and Technology of Nuclear Installations

Figure 7: Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays 