Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays

<div>The influence of TID effects on the carrier recombination rate of DD effects.</div>

Science and Technology of Nuclear Installations

Figure 9: Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays 