Table of Contents
Textures and Microstructures
Volume 11 (1989), Issue 2-4, Pages 203-217

Influence of Grain Boundary Characteristics and of Chemical Parameters on Abnormal Grain Growth in Fe–3% Si Sheets

Laboratoire de Métallurgie Structurale, UA CNRS 1107, Université Paris Sud, Orsay Cedex 91405, France

Copyright © 1989 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The purpose of the present study was to precise mechanisms at the origin of the exaggerated Goss grain growth of Fe–3% Si sheets, grade Hi–B. It has been pointed out that at the primary recrystallized state, the Goss grains which belong to the small grain class are present through the whole sheet thickness. In presence of AlN and MnS inhibitors, their growth during the anisothermal secondary recrystallization annealing is due to the high mobility of the special C.S.L. boundaries; their subsequent expanse at the fifth of the sheet thickness is favoured by purification of the sheet. Indeed, after dissociation of AlN and MnS precipitates at high temperature, a concentration gradient in sulfur and in nitrogen due to the reducing hydrogen atmosphere has been observed in subsurface thanks to SIMS experiments, such as general and C.S.L. boundaries can easily move whereas those at the center of the sheet are more dragged.