Growth and Characterization of CuO Nanostructures on Si for the Fabrication of  CuO/p-Si Schottky Diodes

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</svg> versus <svg height="11.375" id="M67" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 12.7375 11.375" width="12.7375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
</svg> plots obtained from the experimental <svg height="11.375" id="M68" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 26.2125 11.375" width="26.2125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g><g transform="matrix(.017,-0,0,-.017,7.491,11.112)"><path d="M300 253l-14 -55h-229l14 55h229z" id="x2D"></path></g><g transform="matrix(.017,-0,0,-.017,13.543,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
</svg> data in Figure <a href="../fig3/">3</a>.</table>

The Scientific World Journal

fig4

Figure 4

Figure 4: Growth and Characterization of CuO Nanostructures on Si for the Fabrication of  CuO/p-Si Schottky Diodes 