Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

Table 1

Structural parameters of the CuO films.

Deposition method	Grain size	Microstrain	Dislocation density
	(𝐷) (nm)	(𝜀)×10^−4	(𝜌) (cm^2)
Sol-gel	13.83	21.5	4.67×10^15
CBD	15.02	36.1	2.83×10^16