Growth and Characterization of CuO Nanostructures on Si for the Fabrication of  CuO/p-Si Schottky Diodes

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</svg>)</td></tr><tr><td class="thead-hr" colspan="5"><hr/></td></tr><tr><td align="left">Sol-gel</td><td align="center">1.58 </td><td align="center">0.79</td><td align="center">0.80</td><td align="center">410</td></tr><tr><td align="left">CBD</td><td align="center">2.80</td><td align="center">0.79</td><td align="center">0.76</td><td align="center">119</td></tr><tr class="table-tr"><td colspan="5"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Ideality factor, barrier height, and series resistance values of the MIS structures.

The Scientific World Journal

tab2

Table 2

Table 2: Growth and Characterization of CuO Nanostructures on Si for the Fabrication of  CuO/p-Si Schottky Diodes 