Research Article
Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide
Table 1
Refractive indices obtained for excitation wavelength equal to 300 nm and film thicknesses measured by means of spectroscopic ellipsometry for silicon dioxide, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide.
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