Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

Table 1

Refractive index of the oxide films prepared in potentiostatic mode with and without mechanical stirring of the electrolyte solution.

Regime: potentiostatic, pH = 3, water content = 0.5 vol%
Applied voltage (𝑉)	Refractive index (𝑛) (with/without stirring)
50	1.45
100	1.470/1.466
150	1.473
200	1.475
250	1.478/1.474