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The Scientific World Journal
Volume 2014, Article ID 136340, 6 pages
http://dx.doi.org/10.1155/2014/136340
Research Article

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, France

Received 30 August 2013; Accepted 5 January 2014; Published 23 February 2014

Academic Editors: Y.-S. Lin, J. F. Paris, and J.-H. Park

Copyright © 2014 Cyrille Gardès et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Cyrille Gardès, Sonia Bagumako, Ludovic Desplanque, et al., “100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications,” The Scientific World Journal, vol. 2014, Article ID 136340, 6 pages, 2014. https://doi.org/10.1155/2014/136340.