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The Scientific World Journal
Volume 2014 (2014), Article ID 136340, 6 pages
http://dx.doi.org/10.1155/2014/136340
Research Article

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, France

Received 30 August 2013; Accepted 5 January 2014; Published 23 February 2014

Academic Editors: Y.-S. Lin, J. F. Paris, and J.-H. Park

Copyright © 2014 Cyrille Gardès et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. W. Deal, X. B. Mei, K. M. K. H. Leong, V. Radisic, S. Sarkozy, and R. Lai, “THz monolithic integrated circuits using InP high electron mobility transistors,” IEEE Transactions on Terahertz Science and Technology, vol. 1, no. 1, pp. 25–32, 2011. View at Publisher · View at Google Scholar · View at Scopus
  2. B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, and M. G. Ancona, “Antimonide-based compound semiconductors for electronic devices: a review,” Solid-State Electronics, vol. 49, no. 12, pp. 1875–1895, 2005. View at Publisher · View at Google Scholar · View at Scopus
  3. C.-A. Chang, L. L. Chang, E. E. Mendez, M. S. Christie, and L. Esaki, “Electron densities in InAs-AlSb quantum wells,” Journal of Vacuum Science & Technology B, vol. 2, no. 2, pp. 214–216, 1984. View at Publisher · View at Google Scholar · View at Scopus
  4. G. Tuttle and H. Kroemer, “An AlSb/InAs/AlSb quantum well HFT,” IEEE Transactions on Electron Devices, vol. 34, no. 11, p. 2358, 1987. View at Google Scholar
  5. B. Y. Ma, J. Bergman, P. Chen et al., “InAs/AlSb HEMT and its application to ultra-low-power wideband high-gain low-noise amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 12, pp. 4448–4454, 2006. View at Publisher · View at Google Scholar · View at Scopus
  6. W. R. Deal, R. Tsai, M. D. Lange, J. Brad Boos, B. R. Bennett, and A. Gutierrez, “A low power/low noise MMIC amplifier for phased-array applications using InAs/AlSb HEMT,” in Proceedings of the IEEE MTT-S International Microwave Symposium Digest, pp. 2051–2054, June 2006. View at Publisher · View at Google Scholar · View at Scopus
  7. Y. Roelens, A. Olivier, L. Desplanque et al., “Tellurium δ-doped 120 nm AlSb/InAs HEMTs: towards sub-100 mV electronics,” in Proceedings of the 68th Device Research Conference (DRC '10), pp. 53–54, June 2010. View at Publisher · View at Google Scholar · View at Scopus
  8. A. Olivier, A. Noudeviwa, N. Wichmann et al., “High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply,” in Proceedings of the 5th Microwave Integrated Circuits Conference (EuMIC '10), pp. 162–165, Paris, France, October 2010. View at Scopus
  9. L. Desplanque, S. El Kazzi, J. Codron -L et al., “AlSb nucleation induced anisotropic electron mobility in AlSb/InAs HEMTs heterostructures on GaAs,” Applied Physics Letters, vol. 100, no. 26, pp. 262103–262104, 2012. View at Publisher · View at Google Scholar
  10. C. Gardès, S. M. Bagumako, L. Desplanque et al., “120 nm AlSb/InAs HEMT without gate recess: 290 GHz fT and 335 GHz fmax,” in Proceedings of the International Conference on Indium Phosphide and Related Materials (IPRM '13), pp. 1–2, Kobe, Japan, 2013. View at Publisher · View at Google Scholar
  11. Y. C. Chou, L. J. Lee, J. M. Yang et al., “The effect of gate metals on manufacturability of 0.1 µm metamorphic AlSb/InAs HEMTs for ultra low-power applications,” in Proceedings of the 20th International Conference on Indium Phosphide and Related Materials (IPRM '08), pp. 1–14, May 2008. View at Publisher · View at Google Scholar
  12. R. Tsai, M. Lange, L. J. Lee et al., “260 GHz fT, 280 GHz fmax AlSb/InAs HEMT technology,” in Proceedings of the 63rd Device Research Conference (DRC '05), pp. 257–258, June 2005. View at Publisher · View at Google Scholar · View at Scopus
  13. J. Brad Boos, W. Kruppa, B. R. Bennett et al., “AlSb/InAs HEMT's for low-voltage, high-speed applications,” IEEE Transactions on Electron Devices, vol. 45, no. 9, pp. 1869–1875, 1998. View at Publisher · View at Google Scholar · View at Scopus
  14. G. Moschetti, M. Abbasi, Per-Ake Nilsson et al., “True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications,” Solid-State Electronics, vol. 79, pp. 268–273, 2013. View at Publisher · View at Google Scholar
  15. C. Teyssandier, F. de Groote, R. Sommet et al., “Characterization and modeling of impact ionization effects on small and large signal characteristics of AlGaAs/GaInAs/GaAs PHEMTs,” in Proceedings of the 3rd European Microwave Integrated Circuit Conference (EuMIC '08), pp. 119–122, Amsterdam, The Netherlands, October 2008. View at Publisher · View at Google Scholar
  16. M. Isler, “Investigation and modeling of impact ionization in HEMTs for DC and RF operating conditions,” Solid-State Electronics, vol. 46, no. 10, pp. 1587–1593, 2002. View at Publisher · View at Google Scholar · View at Scopus
  17. G. Dambrine, H. Happy, F. Danneville, and A. Cappy, “New method for on wafer noise measurement,” IEEE Transactions on Microwave Theory and Techniques, vol. 41, no. 3, pp. 375–381, 1993. View at Publisher · View at Google Scholar · View at Scopus
  18. R. Tsai, R. Grundbacher, M. Lange et al., “Manufacturable AlSb/InAs HEMT technology for ultra-low power millimeter-wave integrated circuits,” in Proceedings of the Mantech Conference, pp. 69–72, 2004.